IRFZ14STRR【PDF 1/9 页】MOSFET N-CH 60V 10A D2PAK

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Sheet目录447

[1页]2页 3页 4页 5页

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

FEATURES

? Halogen-free According to IEC 61249-2-21

V DS (V)

Definition

R DS(on) ( ? )

Q g (Max.) (nC)

Q gs (nC)

Q gd (nC)

Configuration

I 2 PAK (TO-262)

V GS = 10 V

D 2 PAK (TO-263)

3.1

5.8

Single

0.20

? Advanced Process Technology

? Surface Mount (IRFZ14S, SiHFZ14S)

? Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)

? 175 °C Operating Temperature

? Fast Switching

? Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extermely low

on resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extermely efficient reliabel deviece for use in a wide

variety of applications.

The D 2 PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

N-Channel MOSFET

highest power capability and lowest possible on-resistance

in any existing surface mount package. The D 2 PAK is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

The through-hole version (IRFZ14L, SiHFZ44L) is available

for low profile applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

D 2 PAK (TO-263)

SiHFZ14S-GE3

IRFZ14SPbF

SiHFZ14S-E3

D 2 PAK (TO-263)

SiHFZ14STRL-GE3 a

IRFZ14STRLPbF a

SiHFZ14STL-E3 a

I 2 PAK (TO-262)

SiHFZ14L-GE3

IRFZ14LPbF

SiHFZ14L-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V DS

V GS

LIMIT

± 20

UNIT

Continuous Drain Current

V GS at 10 V

T C = 25 °C

T C = 100 °C

I D

7.2

Pulsed Drain Current a

I DM

Linear Derating Factor

0.29

W/°C

Single Pulse Avalanche Energy b

E AS

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount) e

Peak Diode Recovery dV/dt c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T C = 25 °C

T A = 25 °C

for 10 s

P D

dV/dt

T J , T stg

3.7

4.5

- 55 to + 175

300 d

V/ns

°C

Notes

b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

c. V DD = 25 V, starting T J = 25 °C, L = 548 μH, R g = 25 ? , I AS = 10 A (see fig. 12).

d. I SD ? 10 A, dI/dt ? 90 A/μs, V DD ? V DS , T J ? 175 °C.

e. 1.6 mm from case.

f. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90365

S11-1063-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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